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| BC517 Darlington Transistors NPN Silicon Features * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Collector -Emitter Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25C Derate above TA = 25C Total Power Dissipation @ TA = 25C Derate above TA = 25C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB IC PD PD TJ, Tstg Value 30 40 10 1.0 625 12 1.5 12 -55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C W mW/C C 12 3 http://onsemi.com COLLECTOR 1 BASE 2 EMITTER 3 TO-92 CASE 29 STYLE 17 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W BC 517 AYWW G G MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC517 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC517/D 1 January, 2006 - Rev. 3 BC517 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 2.0 mAdc, IBE = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VCB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector -Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2. fT = |hfe| * ftest fT - 200 - MHz hFE 30,000 VCE(sat) - VBE(on) - - 1.4 - 1.0 Vdc - - Vdc - V(BR)CES 30 V(BR)CBO 40 V(BR)EBO 10 ICES - ICBO - IEBO - - 100 - 100 nAdc - 500 nAdc - - nAdc - - Vdc - - Vdc Vdc Symbol Min Typ Max Unit RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 500 200 100 BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 100 mA 10 mA en, NOISE VOLTAGE (nV) IC = 1.0 mA 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) 100 70 50 30 20 10 10 mA 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA 100 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3 BC517 SMALL-SIGNAL CHARACTERISTICS 20 TJ = 25C |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C C, CAPACITANCE (pF) 10 7.0 5.0 2.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. High Frequency Current Gain 200 k TJ = 125C hFE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 3.0 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 25C 2.0 1.5 -55 C VCE = 5.0 V 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RV, TEMPERATURE COEFFICIENTS (mV/ C) 1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 -1.0 -2.0 -3.0 *APPLIES FOR IC/IB hFE/3.0 *RqVC FOR VCE(sat) 25C TO 125C -55 C TO 25C 25C TO 125C -4.0 qVB FOR VBE -5.0 -6.0 5.0 7.0 10 -55 C TO 25C 0.8 0.6 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. "On" Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 BC517 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 0.05 SINGLE PULSE D = 0.5 0.2 () RESISTANCE (NORMALIZED) SINGLE PULSE ZqJC(t) = r(t) * RqJC TJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) * RqJA TJ(pk) - TA = P(pk) ZqJA(t) 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 TA = 25C TC = 25C 1.0 ms 100 ms 1.0 s FIGURE A tP PP PP t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 BC517 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BC517/D |
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